APTGT400TL65G APTGT400TL65G C rev 0 november, 2014 www.microsemi.com 1-7 all ratings @ t j = 25c unless otherwise specified these devices are sensitiv e to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 0/vbus out cr6 cr5 neutral vbus e3e4 g3 g1g2 e2 q4 q3 g4 e1 q1q2 v ces = 650v i c = 400a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter trench + field stop igbt3 power module cr1 cr2 cr3 cr4 downloaded from: http:///
APTGT400TL65G APTGT400TL65G C rev 0 november, 2014 www.microsemi.com 2-7 q1 to q4 absolute maximum ratings (per igbt) symbol parameter max ratings unit v ces collector - emitter voltage 650 v i c continuous collector current t c = 25c 500 a t c = 80c 400 i cm pulsed collector current t c = 25c 800 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 1150 w rbsoa reverse bias safe operating area t j = 125c 800a @ 600v q1 to q4 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 650v 250 a v ce(sat) collector emitter saturation voltage v ge = 15v i c = 400a t j = 25c 1.5 1.9 v t j = 150c 1.7 v ge ( th ) gate threshold voltage v ge = v ce , i c = 6.4 ma 5.1 5.8 6.4 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 1.2 a q1 to q4 dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 24 nf c oes output capacitance 1.5 c res reverse transfer capacitance 0.75 q g gate charge v ge =15v, i c =400a v ce =300v 4.2 c t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 300v i c = 400a r g = 1.8 115 ns t r rise time 45 t d(off) turn-off delay time 225 t f fall time 55 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 300v i c = 400a r g = 1.8 130 ns t r rise time 50 t d(off) turn-off delay time 300 t f fall time 70 e on turn on energy v ge = 15v v bus = 300v i c = 400a r g = 1.8 t j = 25c 2 mj t j = 150c 3.6 e off turn off energy t j = 25c 11.5 t j = 150c 14 i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 2000 a r thjc junction to case thermal resistance 0.13 c/w downloaded from: http:///
APTGT400TL65G APTGT400TL65G C rev 0 november, 2014 www.microsemi.com 3-7 cr1 to cr4 diode rating s and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 650 v i rm reverse leakage current v r =650v 150 a i f dc forward current tc = 80c 300 a v f diode forward voltage i f = 300a v ge = 0v t j = 25c 1.6 2 v t j = 150c 1.5 t rr reverse recovery time i f = 300a v r = 300v di/dt =4000a/s t j = 25c 130 ns t j = 150c 225 q rr reverse recovery charge t j = 25c 13.7 c t j = 150c 29 e rr reverse recovery energy t j = 25c 3.2 mj t j = 150c 7 r thjc junction to case thermal resistance 0.29 c/w cr5 & cr6 diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 650 v i rm reverse leakage current v r =650v 150 a i f dc forward current tc = 80c 400 a v f diode forward voltage i f = 400a v ge = 0v t j = 25c 1.6 2.0 v t j = 150c 1.5 t rr reverse recovery time i f = 400a v r = 300v di/dt =4800a/s t j = 25c 125 ns t j = 150c 220 q rr reverse recovery charge t j = 25c 19 c t j = 150c 40 e rr reverse recovery energy t j = 25c 4.4 mj t j = 150c 9.6 r thjc junction to case thermal resistance 0.2 c/w thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m for terminals m5 2 3.5 wt package weight 300 g downloaded from: http:///
APTGT400TL65G APTGT400TL65G C rev 0 november, 2014 www.microsemi.com 4-7 sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com q1 to q4 typical performance curve downloaded from: http:///
APTGT400TL65G APTGT400TL65G C rev 0 november, 2014 www.microsemi.com 5-7 t j =25c t j =150c 0 200 400 600 800 00.511.522.53 i c (a) v ce (v) output characteristics (v ge =15v) v ge =15v v ge =13v v ge =19v v ge =9v 0 200 400 600 800 00.511.522.533.5 i c (a) v ce (v) output characteristics t j = 150c t j =25c t j =150c 0 200 400 600 800 567891011 i c (a) v ge (v) transfert characteristics eon eof f 0 5 10 15 20 25 0 200 400 600 800 e ( m j ) i c (a) energy losses vs collector current v ce = 300v v ge = 15v r g = 1.8 ? t j = 150c eon eof f 0 5 10 15 20 25 024681 01 2 e ( m j ) gate resistance (ohms) v ce = 300v v ge =15v i c = 400a t j = 150c sw itching energy losses vs gate resistance 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 i c (a) v ce (v) reverse bias safe operating area v ge =15v t j =150c r g =1.8 ? d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds m axim um effective transient thermal impedance, junction to case vs puls e duration downloaded from: http:///
APTGT400TL65G APTGT400TL65G C rev 0 november, 2014 www.microsemi.com 6-7 cr1 to cr4 typical performance curve energy losses vs collector current 0 2 4 6 8 10 0 100 200 300 400 500 i f (a) e rr (mj) v ce = 300v r g = 2.2 ? t j = 150c maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) cr5 & cr6 typical performance curve energy losses vs collector current 0 4 8 12 16 0 200 400 600 800 i f (a) e rr (mj) v r = 300v t j = 150c maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.04 0.08 0.12 0.16 0.2 0.24 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 500 600 700 800 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) downloaded from: http:///
APTGT400TL65G APTGT400TL65G C rev 0 november, 2014 www.microsemi.com 7-7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custom ers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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